high?voltage high power transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. ? high collector ? emitter sustaining voltage ? npn pnp v ceo(sus) = 160 vdc ? MJE4343 mje4353 ? high dc current gain ? @ i c = 8.0 adc h fe = 35 (typ) ? low collector ? emitter saturation voltage ? v ce(sat) = 2.0 vdc (max) @ i c = 8.0 adc these devices are available in pb ? free package(s). specifications herein apply to both standard and pb ? free devices. please see our website at www.onsemi.com for specific pb ? free orderable part numbers, or contact your local on semiconductor sales office or representative. ??????????????????????? ??????????????????????? maximum ratings ???????????? ???????????? ????? ????? ?????? ?????? ??? ??? ???????????? ???????????? collector ? emitter voltage ????? ????? ?????? ?????? ??? ??? ???????????? ???????????? ? base voltage ????? ????? ?????? ?????? ??? ??? ???????????? ???????????? ? base voltage ????? ????? ?????? ?????? ??? ??? ???????????? ? ?????????? ? ???????????? collector current ? continuous peak (1) ????? ? ??? ? ????? i c ?????? ? ???? ? ?????? 16 20 ??? ? ? ? ??? adc ???????????? ???????????? ????? ????? ?????? ?????? ??? ??? ???????????? ???????????? c ????? ????? ?????? ?????? ??? ??? ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ????? ? ??? ? ????? t j , t stg ?????? ? ???? ? ?????? ? 65 to + 150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? ???????????? ????? ????? ?????? ?????? ??? ??? ???????????? ???????????? thermal resistance, junction to case ????? ????? jc ?????? ?????? ??? ??? c/w (1) pulse test: pulse width 5.0 s, duty cycle 10%. 3.5 0 figure 1. power derating reference: ambient temperature t a , ambient temperature ( c) 25 50 100 125 3.0 2.5 0.5 75 150 1.0 1.5 2.0 p d , power dissipation (watts) on semiconductor ? semiconductor components industries, llc, 2006 march, 2006 ? rev. 4 1 publication order number: MJE4343/d MJE4343 mje4353 16 ampere power transistors complementary silicon 160 volts npn pnp case 340d ? 02 to ? 218 type
MJE4343 mje4353 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ? ???????????????????? ? ?????????????????????? collector ? emitter sustaining voltage (1) (i c = 200 madc, i b = 0) ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 160 ???? ? ?? ? ???? ? ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? ? emitter cutoff current (v ce = 80 vdc, i b = 0) ????? ????? ??? ??? ???? ???? ??? ??? adc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector ? emitter cutoff current (v ce = rated v cb , v eb(off) = 1.5 vdc) (v ce = rated v cb , v eb(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ? ??? ? ????? i cex ??? ? ? ? ? ? ? ??? ? ? ???? ? ?? ? ? ?? ? ???? 1.0 5.0 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ?????????????????????? ? base cutoff current (v cb = rated v cb , i e = 0) ????? ????? ??? ??? ???? ???? ??? ??? adc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter ? base cutoff current (v be = 7.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? ? ???? ? ?? ? ???? 1.0 ??? ? ? ? ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 8.0 adc, v ce = 2.0 vdc) (i c = 16 adc, v ce = 4.0 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 15 8.0 ???? ? ?? ? ???? 35 (typ) 15 (typ) ??? ? ? ? ??? ? ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector ? emitter saturation voltage (i c = 8.0 adc, i b = 800 ma) (i c = 16 adc, i b = 2.0 adc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? ? ? ???? ? ?? ? ? ?? ? ???? 2.0 3.5 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? base ? emitter saturation voltage (i c = 16 adc, i b = 2.0 adc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? ? ???? ? ?? ? ???? 3.9 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? ? emitter on voltage (i c = 16 adc, v ce = 4.0 vdc) ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current ? gain ? bandwidth product (2) (i c = 1.0 adc, v ce = 20 vdc, f test = 0.5 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 1.0 ???? ? ?? ? ???? ? ??? ? ? ? ??? mhz ?????????????????????? ? ???????????????????? ? ?????????????????????? output capacitance (v cb = 10 vdc, i e = 0, f = 0.1 mhz) ????? ? ??? ? ????? c ob ??? ? ? ? ??? ? ???? ? ?? ? ???? 800 ??? ? ? ? ??? pf (1) pulse test: pulse width 300 s, duty cycle 2.0%. (2) f t = ? h fe ?? f test .
MJE4343 mje4353 http://onsemi.com 3 t, time (s) figure 2. switching times test circuit +11 v 25 s 0 ?9.0 v r b ?4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1.0% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma 3.0 i c , collector current (amp) t j = 25 c i c /i b = 10 v ce = 30 v 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.2 0.5 0.7 5.0 2.0 1.0 3.0 20 figure 3. typical turn ? on time 10 7.0 t r 0.3 note: reverse polarities to test pnp devices. t d @ v be(off) = 5.0 v 5.0 i c , collector current (amp) 0.5 3.0 2.0 1.0 figure 4. turn ? off time 0.7 0.2 0.5 0.7 5.0 2.0 0.3 1.0 3.0 20 10 7.0 t j = 25 c i c /i b = 10 i b1 = i b2 v ce = 30 v t s t f t, time (s) 2.0 0.2 i c , collector current (amp) 20 1.6 1.2 0.8 0.4 0 10 7.0 0.3 0.7 0.5 2.0 1.0 5.0 3.0 t j = 25 c v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 2.0 v figure 5. on voltages typical characteristics
MJE4343 mje4353 http://onsemi.com 4 v ce , collector?emitter voltage (volts) 1000 0.2 i c , collector current (amps) 20 100 50 20 10 10 0.5 2.0 1.0 5.0 v ce = 2 v figure 6. mje4340 series (npn) h fe , dc current gain t j = 150 c 25 c ?55 c 1000 0.2 i c , collector current (amps) 20 100 10 10 0.5 2.0 1.0 5.0 figure 7. mje4350 series (pnp) h fe , dc current gain 2.0 0.05 i b , base current (amp) 5.0 1.2 0 3.0 0.1 0.3 0.2 0.5 figure 8. collector saturation region 1.6 0.8 0.4 0.07 0.7 1.0 2.0 t j = 25 c i c = 4.0 a 8.0 a 16 a v ce = 2 v t j = 150 c 25 c ?55 c v ce = 2 v t j = 150 c 25 c ?55 c dc current gain t, time (ms) 0.01 0.02 0.05 1.0 2.0 5.0 10 20 50 100 2000 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), effective transient thermal jc (t) = r(t) jc jc = 1.0 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 resistance (normalized) figure 9. thermal response 0.5 d = 0.5 0.05 0.02 200 500 1000 0.1 0.02 0.01 single pulse
MJE4343 mje4353 http://onsemi.com 5 100 v ce , collector?emitter voltage (volts) 0.1 200 50 1.0 figure 10. maximum forward bias safe operating area 5.0ms dc 20 150 30 20 10 7.0 5.0 3.0 i c , collector current (amp) 0.2 0.5 2.0 5.0 10 50 70 100 secondary breakdown limited thermal limit t c = 25 c bonding wire limited reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turn ? off, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltage ? current conditions during reverse biased turn ? off. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 11 gives rbsoa characteristics. there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 10 may be found at any case temperature by using the appropriate curve on figure 9. 20 v ce , collector?emitter voltage (volts) 8.0 figure 11. maximum reverse bias safe operating area 16 120 100 80 60 40 20 i c , collector current (amps) 4.0 12 140 160 180 t j = 100 c v be(off) 5 v
MJE4343 mje4353 http://onsemi.com 6 package dimensions case 340d ? 02 issue e style 1: pin 1. base 2. collector 3. emitter 4. collector a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a ??? 20.35 ??? 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l ??? 16.20 ??? 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069
MJE4343 mje4353 http://onsemi.com 7 notes on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 MJE4343/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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